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| TP0205A/AD New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) 3.8 @ VGS = -4.5 V 5.0 @ VGS = -2.5 V ID (mA) -180 -100 FEATURES D D D D D High-Side Switching Low On-Resistance: 2.6 W (typ) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5 V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery Operated Systems D Load/Power Switching-Cell Phones, PDA SOT-323 SC-70 (3-Leads) G 1 3 S 2 D S1 G1 D2 1 2 3 SOT-363 SC-70 (6-Leads) 6 5 4 D1 G2 S2 Marking Code: TP0205A: Al TP0205AD: Cwl w = Week Code l = Lot Traceability Order Number: TP0205A Order Number: TP0205AD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM TP0205A -20 "8 -180 -140 -500 0.15 TP0205AD Unit V mA 0.20 (Total) 0.13 (Total) -55 to 150 W _C PD TJ, Tstg 0.10 THERMAL RESISTANCE RATINGS Parameter Thermal resistance, Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70869 S-04279--Rev. B, 16-Jul-01 www.vishay.com Symbol RthJA TP0205A 833 TP0205AD 625 (Total) Unit _C/W 11-1 TP0205A/AD Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = -10 mA VDS = VGS, ID = -50 mA VDS = 0 V, VGS = "8 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55_C VGS = -4.5 V, VDS = -8.0 V VGS = -2.5 V, VDS = -5.0 V VGS = -4.5 V, ID = -180 mA rDS(on) gfs VSD VGS = -2.5 V, ID = -400 -120 2.6 4.0 200 -0.7 -1.2 3.8 5.0 W mS V mA -20 -0.4 -24 V -0.9 "2 -0.001 -1.5 "100 nA -100 -1 mA Symbol Test Condition Min Typb Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea -75 mA VDS = -2.5 V, ID = -50 mA IS = -50 mA, VGS = 0 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -5.0 V, VGS = 0 V, f = 1 MHz VDS = -5.0 V, VGS = -4.5 V, ID = -100 mA 350 25 125 20 14 5 pF 450 pC Switching c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = -3.0 V, RL = 100 W ID = -0.25 A, VGEN = -4.5 V, RG = 10 W 7 25 19 9 12 35 30 15 VPOJ ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70869 S-04279--Rev. B, 16-Jul-01 TP0205A/AD New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics -1.2 5V -0.4 4.5 V -0.8 -4 V -3.5 V -3 V -2.5 V -2 V 0.0 0 -1 -2 -3 -4 0.0 0.0 -3.0 ID - Drain Current (A) 25_C -0.3 125_C -0.2 -0.5 TJ = -55_C Vishay Siliconix Transfer Characteristics -1.0 ID - Drain Current (A) -0.6 -0.4 -0.2 -0.1 -0.5 -1.0 -1.5 -2.0 -2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 VGS = 0 V f = 1 MHz rDS(on) - On-Resistance ( ) 36 C - Capacitance (pF) 6 Capacitance VGS = -2.5 V 4 VGS = -4.5 V 2 27 Ciss 18 Coss 9 Crss 0 0.0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0 -3 -6 -9 -12 ID - Drain Current (A) -10 VGS - Gate-to-Source Voltage (V) VDS = -6 V ID = 80 mA VDS - Drain-to-Source Voltage (V) Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = -4.5 V ID = -180 mA rDS(on) - On-Resistance ( ) (Normalized) -8 1.4 -6 1.2 -4 1.0 -2 0.8 0 0 100 200 300 400 500 600 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 70869 S-04279--Rev. B, 16-Jul-01 www.vishay.com 11-3 TP0205A/AD Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage -1 TJ = 150_C rDS(on) - On-Resistance ( ) LS - Source Current (A) 6 On-Resistance vs. Gate-to-Source Voltage 5 -0.1 4 ID = -180 mA 3 -0.01 TJ = 25_C 2 1 -0.001 0.00 -0.5 -1.0 1.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = -50 mA 0.2 VGS(th) - Variance (V) 0.1 0.0 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70869 S-04279--Rev. B, 16-Jul-01 |
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